CS4N80D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS4N80D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 61 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.8 Ohm
   Paquete / Cubierta: TO-252

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CS4N80D Datasheet (PDF)

..1. Size:702K convert
cs4n80f cs4n80p cs4n80u cs4n80d.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N80F, CS4N80P,CS4N80U,CS4N80D800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N80F TO-220

0.1. Size:1003K blue-rocket-elect
brcs4n80dp.pdf

BRCS4N80DP Rev.A Nov.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. / Applications

8.1. Size:1321K jilin sino
jcs4n80ch jcs4n80fh.pdf

N RN-CHANNEL MOSFET JCS4N80H Package MAIN CHARACTERISTICS ID 4 A VDSS 800 V Rdson-max 2.5 @Vgs=10V Qg-typ 14nC APPLICATIONS High frequency switch mode power supply Electronic ballasts LED LED power supply

8.2. Size:3308K jilin sino
jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b jcs4n80s.pdf

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

8.3. Size:1170K jilin sino
jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b.pdf

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

8.4. Size:1385K jilin sino
jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80s jcs4n80b.pdf

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

8.5. Size:283K crhj
cs4n80 a3hd.pdf

Silicon N-Channel Power MOSFET R CS4N80 A3HD General Description VDSS 800 V CS4N80 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

8.6. Size:705K wuxi china
cs4n80a3hd-g.pdf

Silicon N-Channel Power MOSFET R CS4N80 A3HD-G General Description VDSS 800 V CS4N80 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

8.7. Size:380K wuxi china
cs4n80fa9hd.pdf

Silicon N-Channel Power MOSFET R CS4N80F A9HD General Description VDSS 800 V CS4N80F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

8.8. Size:518K wuxi china
cs4n80a4hd-g.pdf

Silicon N-Channel Power MOSFET R CS4N80 A4HD-G VDSS 800 V General Description ID 4 A CS4N80 A4HD-G, the silicon N-channel Enhanced PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

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