CS5N100P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS5N100P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 70 W
Voltaje máximo drenador - fuente |Vds|: 1000 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 47 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia entre drenaje y fuente RDS(on): 2.5 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET CS5N100P
CS5N100P Datasheet (PDF)
cs5n100f cs5n100p.pdf
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nvertSuzhou Convert Semiconductor Co ., Ltd.CS5N100F,CS5N100P,CS5N100VF1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS5N100F TO-220F C
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brcs5n10mc.pdf
BRCS5N10MC Rev.A Dec.-2016 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features ( ROHS) ESD High Reliable;Lead Free and Green Devices Available( RoHS Compliant), ESD protected. / Applications
cs5n120f cs5n120w.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd. CS5N120F,CS5N120W1200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS5N120F TO-220F CS5N120FCS
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