CS5N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25) 32 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.6 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

nvertSuzhou Convert Semiconductor Co ., Ltd.CS5N65F, CS5N65P, CS5N65U, CS5N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS5N65F TO-2

N RN-CHANNEL MOSFET JCS5N65FB MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson-max 2.4 @Vgs=10V Qg-typ 13.3nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET R CS5N65F A9R General Description VDSS 650 V CS5N65F A9R, the silicon N-channel Enhanced ID 5 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power