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CS5N65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS5N65D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 61 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm
   Paquete / Cubierta: TO-252

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CS5N65D Datasheet (PDF)

 ..1. Size:441K  convert
cs5n65f cs5n65p cs5n65u cs5n65d.pdf

CS5N65D
CS5N65D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS5N65F, CS5N65P, CS5N65U, CS5N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS5N65F TO-2

 8.1. Size:581K  jilin sino
jcs5n65fb.pdf

CS5N65D
CS5N65D

N RN-CHANNEL MOSFET JCS5N65FB MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson-max 2.4 @Vgs=10V Qg-typ 13.3nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

 8.2. Size:424K  crhj
cs5n65 a8h.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.3. Size:837K  crhj
cs5n65 a4.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.4. Size:829K  crhj
cs5n65f a9h.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25) 32 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.6 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.5. Size:837K  crhj
cs5n65 a3.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 8.6. Size:417K  crhj
cs5n65 a7h.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.7. Size:424K  wuxi china
cs5n65a8h.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.8. Size:417K  wuxi china
cs5n65a7h.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.9. Size:837K  wuxi china
cs5n65a4.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.10. Size:837K  wuxi china
cs5n65a3.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 8.11. Size:709K  wuxi china
cs5n65fa9h.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.12. Size:263K  wuxi china
cs5n65fa9r.pdf

CS5N65D
CS5N65D

Silicon N-Channel Power MOSFET R CS5N65F A9R General Description VDSS 650 V CS5N65F A9R, the silicon N-channel Enhanced ID 5 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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