CS5N70F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS5N70F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 94 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO-220F

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CS5N70F datasheet

 ..1. Size:829K  crhj
 cs5n70f a9.pdf pdf_icon

CS5N70F

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..2. Size:690K  convert
 cs5n70f cs5n70p cs5n70u cs5n70d.pdf pdf_icon

CS5N70F

nvert Suzhou Convert Semiconductor Co ., Ltd. CS5N70F, CS5N70P, CS5N70U, CS5N70D 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS5N70F TO-2

 0.1. Size:829K  wuxi china
 cs5n70fa9.pdf pdf_icon

CS5N70F

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:838K  crhj
 cs5n70 a4.pdf pdf_icon

CS5N70F

Silicon N-Channel Power MOSFET R CS5N70 A4 General Description VDSS 700 V CS5N70 A4,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

MOSTRAR MÁS

Otros transistores... CS5N100HF, CS5N100HP, CS5N120F, CS5N120W, CS5N65F, CS5N65P, CS5N65U, CS5N65D, IRFP260, CS5N70P, CS5N70U, CS5N70D, CS5N80F, CS5N80P, CS5N80B, CS6N100F, CS6N100P