CS6N90F Todos los transistores

 ..1. Size:424K  crhj
 cs6n90f a9h.pdf

Silicon N-Channel Power MOSFET R CS6N90F A9H General Description VDSS 900 V CS6N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 48 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.85 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 ..2. Size:710K  convert
 cs6n90f cs6n90p cs6n90b.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS6N90F,CS6N90P,CS6N90B 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS6N90F TO-220F CS6N90F

 ..3. Size:555K  convert
 cs6n90f cs6n90p cs6n90b cs6n90w.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS6N90F,CS6N90P,CS6N90B,CS6N90W 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS6N90F TO-220F

 0.1. Size:1185K  jilin sino
 jcs6n90fa jcs6n90ba jcs6n90sa jcs6n90ca jcs6n90gda.pdf

N R N-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS Package ID 6.0 A VDSS 900 V Rdson Vgs=10V 3.0 -MAX Qg-Typ 24.0nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli

 0.2. Size:1374K  jilin sino
 jcs6n90ch jcs6n90fh jcs6n90b.pdf

N R N-CHANNEL MOSFET JCS6N90H Package MAIN CHARACTERISTICS ID 6 A VDSS 900 V Rdson-max 3.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 8.1. Size:303K  crhj
 cs6n90 a8h.pdf

Silicon N-Channel Power MOSFET R CS6N90 A8H General Description VDSS 900 V CS6N90 A8H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:611K  crhj
 cs6n90 arh-g.pdf

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.3. Size:609K  wuxi china
 cs6n90arh-g.pdf

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various