CS6N90P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS6N90P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 97 W
Voltaje máximo drenador - fuente |Vds|: 900 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 48 nC
Tiempo de subida (tr): 26 nS
Conductancia de drenaje-sustrato (Cd): 115 pF
Resistencia entre drenaje y fuente RDS(on): 2.05 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET CS6N90P
CS6N90P Datasheet (PDF)
cs6n90f cs6n90p cs6n90b.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd. CS6N90F,CS6N90P,CS6N90B900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N90F TO-220F CS6N90F
cs6n90f cs6n90p cs6n90b cs6n90w.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd. CS6N90F,CS6N90P,CS6N90B,CS6N90W900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N90F TO-220F
jcs6n90fa jcs6n90ba jcs6n90sa jcs6n90ca jcs6n90gda.pdf
N RN-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS Package ID 6.0 A VDSS 900 V RdsonVgs=10V 3.0 -MAX Qg-Typ 24.0nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli
jcs6n90ch jcs6n90fh jcs6n90b.pdf
N RN-CHANNEL MOSFET JCS6N90H Package MAIN CHARACTERISTICS ID 6 A VDSS 900 V Rdson-max 3.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP
cs6n90f a9h.pdf
Silicon N-Channel Power MOSFET R CS6N90F A9H General Description VDSS 900 V CS6N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 48 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.85 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs6n90 a8h.pdf
Silicon N-Channel Power MOSFET R CS6N90 A8H General Description VDSS 900 V CS6N90 A8H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs6n90 arh-g.pdf
Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs6n90arh-g.pdf
Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
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