CS7N70U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS7N70U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 83 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 35 nC
Tiempo de subida (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 100 pF
Resistencia entre drenaje y fuente RDS(on): 1.4 Ohm
Paquete / Cubierta: TO-251
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CS7N70U Datasheet (PDF)
cs7n70f cs7n70u.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N70F,CS7N70U700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N70F TO-220F CS7N70FCS7N70
jcs7n70v jcs7n70r jcs7n70c jcs7n70f jcs7n70s jcs7n70b.pdf
N RN-CHANNEL MOSFET JCS7N70C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR
jcs7n70fe.pdf
N RN-CHANNEL MOSFET JCS7N70FE Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max(@Vgs=10V) 1.35 Qg-typ 25.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES
cs7n70 ard.pdf
Silicon N-Channel Power MOSFET R CS7N70 ARD General Description VDSS 700 V CS7N70 ARD, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs7n70ard.pdf
Silicon N-Channel Power MOSFET R CS7N70 ARD General Description VDSS 700 V CS7N70 ARD, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs7n70a4r-g.pdf
Silicon N-Channel Power MOSFET R CS7N70 A4R-G General Description VDSS 700 V CS7N70 A4R-G, the silicon N-channel Enhanced ID 7 A PD(TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.96 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
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