CS8N65F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS8N65F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 64 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 106 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.15 Ohm

Encapsulados: TO-220F

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CS8N65F datasheet

 ..1. Size:354K  crhj
cs8n65f a9h.pdf pdf_icon

CS8N65F

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 ..2. Size:428K  convert
cs8n65f cs8n65p cs8n65d cs8n65f-b.pdf pdf_icon

CS8N65F

CS8N65F,CS8N65P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N65D,CS8N65F-B 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N65F TO

 ..3. Size:648K  convert
cs8n65f cs8n65p.pdf pdf_icon

CS8N65F

nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N65F,CS8N65P 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N65F TO-220F CS8N65F CS8N65P

 0.1. Size:1248K  jilin sino
jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf pdf_icon

CS8N65F

N R N-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 8 8 8 8 8 8 8 8 8 ID .0 A VDSS 650 V Rdson-max 1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED

Otros transistores... CS7N70U, CS7N80P, CS8N120V, CS8N120W, CS8N60P, CS8N60U, CS8N60D, CS8N65F-B, K2611, CS8N65P, CS8N65D, CS8N70F, CS8N90F, CS8N90P, CS9N65F, CS9N65D, CS9N80F