CS9N90W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS9N90W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 70 W
   Voltaje máximo drenador - fuente |Vds|: 900 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 9 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 84 nC
   Tiempo de subida (tr): 54 nS
   Conductancia de drenaje-sustrato (Cd): 194 pF
   Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
   Paquete / Cubierta: TO-247

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CS9N90W Datasheet (PDF)

..1. Size:620K convert
cs9n90f cs9n90p cs9n90w cs9n90v.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS9N90F, CS9N90P,CS9N90W,CS9N90V900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS9N90F TO-220

0.1. Size:1487K jilin sino
jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

8.1. Size:898K jilin sino
jcs9n90ft.pdf

N RN-CHANNEL MOSFET JCS9N90FT Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson 1.35 @Vgs=10VQg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power

8.2. Size:771K crhj
cs9n90f a9d.pdf

Silicon N-Channel Power MOSFET R CS9N90F A9D General Description VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

8.3. Size:785K crhj
cs9n90 anhd.pdf

Silicon N-Channel Power MOSFET R CS9N90 ANHD General Description VDSS 900 V CS9N90 ANHD, the silicon N-channel Enhanced ID 9 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.95 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

8.4. Size:785K wuxi china
cs9n90anhd.pdf