CTD02N004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CTD02N004
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 87 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 90 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 53 nS
Conductancia de drenaje-sustrato (Cd): 355 pF
Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
Paquete / Cubierta: TO-252
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CTD02N004 Datasheet (PDF)
ctd02n004.pdf
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ctd02n007.pdf
nvertCTD02N007Suzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switch Hard switched and high frequency circuits Uninterruptible Power Supply (
ctd02n4p8.pdf
nvertCTD02N4P8Suzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switching Hard switched and high frequence circuits Uninterruptible power suppl
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