CTD02N004 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CTD02N004
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 87 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 355 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de CTD02N004 MOSFET
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CTD02N004 datasheet
ctd02n004.pdf
nvert CTD02N004 Suzhou Convert Semiconductor Co ., Ltd. 25V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switching Power Motor Controls High Frequency Isolated DC-DC Converters with S
ctd02n007.pdf
nvert CTD02N007 Suzhou Convert Semiconductor Co ., Ltd. 20V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switch Hard switched and high frequency circuits Uninterruptible Power Supply (
ctd02n4p8.pdf
nvert CTD02N4P8 Suzhou Convert Semiconductor Co ., Ltd. 20V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switching Hard switched and high frequence circuits Uninterruptible power suppl
Otros transistores... CST30N10F, CST30N10U, CST30N10D, CST30N10P, CST9N20LF, CST9N20LP, CTB06N005, CTP06N005, IRF1407, CTD02N007, CTD02N4P8, CTD03N003, CTD03N005, CTD03N10P5, CTD03N3P3, CTD03N4P3, CTD03N4P6
History: PP9H06BV
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