CTD02N4P8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CTD02N4P8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 87 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 383 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm

Encapsulados: TO-252

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CTD02N4P8 datasheet

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CTD02N4P8

nvert CTD02N4P8 Suzhou Convert Semiconductor Co ., Ltd. 20V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switching Hard switched and high frequence circuits Uninterruptible power suppl

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CTD02N4P8

nvert CTD02N004 Suzhou Convert Semiconductor Co ., Ltd. 25V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switching Power Motor Controls High Frequency Isolated DC-DC Converters with S

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CTD02N4P8

nvert CTD02N007 Suzhou Convert Semiconductor Co ., Ltd. 20V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switch Hard switched and high frequency circuits Uninterruptible Power Supply (

Otros transistores... CST30N10D, CST30N10P, CST9N20LF, CST9N20LP, CTB06N005, CTP06N005, CTD02N004, CTD02N007, 10N65, CTD03N003, CTD03N005, CTD03N10P5, CTD03N3P3, CTD03N4P3, CTD03N4P6, CTD03N8P5, CTD03P030