CTD02N4P8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CTD02N4P8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 87 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 383 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Paquete / Cubierta: TO-252
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CTD02N4P8 Datasheet (PDF)
ctd02n4p8.pdf

nvertCTD02N4P8Suzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switching Hard switched and high frequence circuits Uninterruptible power suppl
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nvertCTD02N007Suzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switch Hard switched and high frequency circuits Uninterruptible Power Supply (
Otros transistores... CST30N10D , CST30N10P , CST9N20LF , CST9N20LP , CTB06N005 , CTP06N005 , CTD02N004 , CTD02N007 , STP80NF70 , CTD03N003 , CTD03N005 , CTD03N10P5 , CTD03N3P3 , CTD03N4P3 , CTD03N4P6 , CTD03N8P5 , CTD03P030 .
History: PJT7801 | SUD50N04-37P | SVS60R190FD4 | BSC019N02KSG | AM4930N
History: PJT7801 | SUD50N04-37P | SVS60R190FD4 | BSC019N02KSG | AM4930N



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