CTD02N4P8 Todos los transistores

 

CTD02N4P8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CTD02N4P8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 383 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: TO-252
 

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CTD02N4P8 Datasheet (PDF)

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CTD02N4P8

nvertCTD02N4P8Suzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switching Hard switched and high frequence circuits Uninterruptible power suppl

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CTD02N4P8

nvertCTD02N004Suzhou Convert Semiconductor Co ., Ltd.25V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switching Power Motor Controls High Frequency Isolated DC-DC Converters withS

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CTD02N4P8

nvertCTD02N007Suzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switch Hard switched and high frequency circuits Uninterruptible Power Supply (

Otros transistores... CST30N10D , CST30N10P , CST9N20LF , CST9N20LP , CTB06N005 , CTP06N005 , CTD02N004 , CTD02N007 , 10N65 , CTD03N003 , CTD03N005 , CTD03N10P5 , CTD03N3P3 , CTD03N4P3 , CTD03N4P6 , CTD03N8P5 , CTD03P030 .

History: IRFS5615PBF

 

 
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