CTD04N7P5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CTD04N7P5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 53 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.6 nS
Cossⓘ - Capacitancia de salida: 193 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: TO-252
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CTD04N7P5 Datasheet (PDF)
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Otros transistores... CTD03N4P3 , CTD03N4P6 , CTD03N8P5 , CTD03P030 , CTD03P7P5 , CTD04N004 , CTD04N11P5 , CTD04N5P5 , MMIS60R580P , CTD06N017 , CTD06N030 , CTD06N070 , CTD06N7P5 , CTB06N7P5 , CTP06N7P5 , CTD10N033 , CTD10N100 .
History: AP86T03GJ | AP50WN1K5H | KIA3414 | SFD025N30C2 | NTD4858N-1G | UT3N10G-AB3-R | AP15N10
History: AP86T03GJ | AP50WN1K5H | KIA3414 | SFD025N30C2 | NTD4858N-1G | UT3N10G-AB3-R | AP15N10



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