SSH4N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSH4N70
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Paquete / Cubierta: TO3P
- Selección de transistores por parámetros
SSH4N70 Datasheet (PDF)
ssh4n90.pdf

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ssh4n80as.pdf

SSH4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2. (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac
ssh4n90as.pdf

SSH4N90ASAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
Otros transistores... SSH25N40A , SSH3N70 , SSH3N70A , SSH40N15 , SSH40N15A , SSH40N20 , SSH40N20A , SSH45N20A , SPP20N60C3 , SSH4N70A , SSH4N80AS , SSH4N90AS , SSH5N80A , SSH5N90A , SSH60N06 , SSH60N06A , SSH60N10 .
History: AUIRF7665S2TR | BFC23 | AO4914 | AOD11S60 | IRFR9220 | 2SK787 | SIR496DP
History: AUIRF7665S2TR | BFC23 | AO4914 | AOD11S60 | IRFR9220 | 2SK787 | SIR496DP



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