SSH4N90AS Todos los transistores

 ..1. Size:208K  samsung
 ssh4n90as.pdf

SSH4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 3.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 7.1. Size:165K  fairchild semi
 ssh4n90.pdf

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 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf

 9.2. Size:211K  samsung
 ssh4n80as.pdf

SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

 9.3. Size:276K  semelab
 ssh4n80.pdf

 9.4. Size:441K  semelab
 ssh4n55 ssh4n60.pdf

SSH4N55 PCB 24