DMG7N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMG7N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 142 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET DMG7N65

DMG7N65 Datasheet (PDF)

..1. Size:2930K dyelec
dmt7n65 dmf7n65 dmk7n65 dmg7n65.pdf

7N65 650V N-Channel Power MOSFET RDS(ON)

0.1. Size:553K diodes
dmg7n65sj3.pdf

DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I DBV R DSS DS(ON) Max High BV Rating for Power Application DSST = +25C C Low Input Capacitance 650V 1.4 @ V = 10V 5.5A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automot

0.2. Size:345K diodes
dmg7n65scti.pdf

DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package TC = +25 High BVDSS Rating for Power Application C ITO220AB Low Input/Output Leakage 650V 1.4@VGS = 10V 7.7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip

0.3. Size:453K diodes
dmg7n65sct.pdf

DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID BV R DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 650V 1.4@V = 10V 7.7A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automo

0.4. Size:273K inchange semiconductor
dmg7n65sj3.pdf

isc N-Channel MOSFET Transistor DMG7N65SJ3FEATURESDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

0.5. Size:251K inchange semiconductor
dmg7n65scti.pdf

isc N-Channel MOSFET Transistor DMG7N65SCTIFEATURESDrain Current I = 7.7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

0.6. Size:260K inchange semiconductor
dmg7n65sct.pdf

isc N-Channel MOSFET Transistor DMG7N65SCTFEATURESDrain Current I = 7.7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: OSG55R030HZF | IRFP4232 | 2SJ146

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