BSP75GQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP75GQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2200 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET BSP75GQ
BSP75GQ Datasheet (PDF)
bsp75gq.pdf
BSP75GQ 60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH Product Summary Features and Benefits Continuous Drain Source Voltage: VDS = 60V Short Circuit Protection with Auto Restart On-State Resistance: 550m Over Voltage Protection (Active Clamp) Nominal Load Current (VIN = 5V) : 1.4A Thermal Shutdown with Auto Restart Clamping Energy: 550mJ
bsp75g.pdf
BSP75G60V self-protected low-side IntelliFETTM MOSFET switchSummaryContinuous drain source voltage VDS=60VOn-state resistance 550m SOT223Nominal load current 1.4A (VIN = 5V)Clamping energy 550mJDescriptionSSelf-protected low side MOSFET. Monolithic over temperature, overcurrent, over voltage (active clamp) and ESD protected logic levelDDpower MOSFET intended as a ge
bsp752t.pdf
Target data sheetBSP 752 TSmart Power High-Side-SwitchFeatures Product SummaryOvervoltage protection 60 V Overload protection Vbb(AZ) Current limitation Operating voltage 5...34 VVbb(on)On-state resistance 200 Short circuit protection RON mNominal load current 1.3 A Thermal shutdown with restart IL(nom) Overvoltage protection (including load dump)
bsp75.pdf
HITFET BSP 75Smart Lowside Power SwitchFeatures Product Summary Logic Level InputContinuous drain source voltage V 55 VDS Input protection (ESD)On-state resistance R 550DS(ON) m Thermal shutdown (with restart)Current limitation I 1 AD(lim) Overload protectionNominal load current I 0.7 AD(Nom) Short circuit protectionClamping energy E 550 mJA
bsp75a.pdf
HITFET BSP 75ASmart Lowside Power SwitchFeatures Product Summary Logic Level InputContinuous drain source voltage V 55 VDS Input protection (ESD)On-state resistance R 550DS(ON) m Thermal shutdown (with restart)Current limitation I 1 AD(lim) Overload protectionLoad current (ISO) I 0.7 AD(ISO) Short circuit protectionClamping energy E 550 mJAS
bsp75n.pdf
BSP75N60V self-protected low-side IntellifetTM MOSFET switchSummaryContinuous drain source voltage VDS=60VOn-state resistance 500m Maximum nominal load current(a) 1.1A (VIN = 5V) SOT223Minimum nominal load current(c) 0.7A (VIN = 5V)Clamping energy 550mJDescriptionSSelf-protected low side MOSFET. Monolithic over temperature, overcurrent, over voltage (active clamp) and ESD
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SJMN074R65SW
History: SJMN074R65SW
Liste
Recientemente añadidas las descripciónes de los transistores:
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