BSP75GQ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP75GQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2200 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de BSP75GQ MOSFET
- Selecciónⓘ de transistores por parámetros
BSP75GQ datasheet
bsp75gq.pdf
BSP75GQ 60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Short Circuit Protection with Auto Restart On-State Resistance 550m Over Voltage Protection (Active Clamp) Nominal Load Current (VIN = 5V) 1.4A Thermal Shutdown with Auto Restart Clamping Energy 550mJ
bsp75g.pdf
BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m SOT223 Nominal load current 1.4A (VIN = 5V) Clamping energy 550mJ Description S Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level D D power MOSFET intended as a ge
bsp752t.pdf
Target data sheet BSP 752 T Smart Power High-Side-Switch Features Product Summary Overvoltage protection 60 V Overload protection Vbb(AZ) Current limitation Operating voltage 5...34 V Vbb(on) On-state resistance 200 Short circuit protection RON m Nominal load current 1.3 A Thermal shutdown with restart IL(nom) Overvoltage protection (including load dump)
bsp75.pdf
HITFET BSP 75 Smart Lowside Power Switch Features Product Summary Logic Level Input Continuous drain source voltage V 55 V DS Input protection (ESD) On-state resistance R 550 DS(ON) m Thermal shutdown (with restart) Current limitation I 1 A D(lim) Overload protection Nominal load current I 0.7 A D(Nom) Short circuit protection Clamping energy E 550 mJ A
Otros transistores... DMK4N65 , DMG4N65 , DMT7N65 , DMF7N65 , DMK7N65 , DMG7N65 , 2N7002AQ , 2N7002H , IRLB4132 , BSS123WQ , DMC2053UVT , DMC2450UV , DMC3021LSDQ , DMC3730UFL3 , DMC4029SK4 , DMG1013UWQ , DMG2301L .
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