DMG2301LK Todos los transistores

DMG2301LK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Low Input Capacitance BVDSS RDS(ON) Max TA = +25 C Fast Switching Speed ESD Protected Gate 160m @ VGS = -4.5V -2.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V Halogen and Antimony Free. Green Device (Note 3) 210

DMG2301L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) -20V -3A 150m @ VGS = -2.5V De

DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D L

Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 80m @ VGS = 4.5V -2.7A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 2.5V -2.1A Halogen and Antimony Free. Green Device (N

DMG2301U www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION