DMG2301LK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMG2301LK
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7.4 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET DMG2301LK

DMG2301LK Datasheet (PDF)

..1. Size:507K diodes
dmg2301lk.pdf

DMG2301LK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Low Input Capacitance BVDSS RDS(ON) Max TA = +25C Fast Switching Speed ESD Protected Gate 160m @ VGS = -4.5V -2.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V Halogen and Antimony Free. Green Device (Note 3) 210

6.1. Size:527K diodes
dmg2301l.pdf

DMG2301L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) -20V -3A 150m @ VGS = -2.5V De

7.1. Size:148K diodes
dmg2301u.pdf

DMG2301UP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D L

7.2. Size:118K tysemi
dmg2301u.pdf

Product specificationDMG2301UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 80m @ VGS = 4.5V -2.7A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 2.5V -2.1A Halogen and Antimony Free. Green Device (N

7.3. Size:852K cn vbsemi
dmg2301u.pdf

DMG2301Uwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SML1002R4AN

Liste

Recientemente añadidas las descripciónes de los transistores: