DMN3009LFVW Todos los transistores

 ..1. Size:544K  diodes
 dmn3009lfvw.pdf

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25 C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

 0.1. Size:544K  1
 dmn3009lfvw-7.pdf

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25 C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

 7.1. Size:591K  diodes
 dmn3009sk3.pdf

DMN3009SK3 Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 5.5m @ VGS = 10V 80A 30V Halogen and Antimony Free. Green Device (Note 3) 9.0m @ VGS = 4.5V 60A Qualified to AEC-Q101 Standards for H

 7.2. Size:265K  inchange semiconductor
 dmn3009sk3.pdf

isc N-Channel MOSFET Transistor DMN3009SK3 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 5.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur