DMN3009LFVW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN3009LFVW
Código: SW1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 42 nC
trⓘ - Tiempo de subida: 4.1 nS
Cossⓘ - Capacitancia de salida: 315 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: POWERDI3333-8
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DMN3009LFVW Datasheet (PDF)
dmn3009lfvw.pdf
DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b
dmn3009lfvw-7.pdf
DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b
dmn3009sk3.pdf
DMN3009SK3 Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 5.5m @ VGS = 10V 80A 30V Halogen and Antimony Free. Green Device (Note 3) 9.0m @ VGS = 4.5V 60A Qualified to AEC-Q101 Standards for H
dmn3009sk3.pdf
isc N-Channel MOSFET Transistor DMN3009SK3FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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