DMN3023L Todos los transistores

 ..1. Size:546K  diodes
 dmn3023l.pdf

DMN3023L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) TA = +25 C Low Gate Threshold Voltage Low Input Capacitance 6.2A 25m @ VGS = 10V Fast Switching Speed 30V 28m @ VGS = 4.5V 5.8A Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Complian

 8.1. Size:290K  diodes
 dmn3026lvt.pdf

DMN3026LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 23m @ VGS = 10V 6.6A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qual

 8.2. Size:157K  diodes
 dmn3024sfg.pdf

DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25 C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.5A density end products 30V O

 8.3. Size:293K  diodes
 dmn3025lss.pdf

DMN3025LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON)max TA = +25 C Fast Switching Speed 20m @ VGS = 10V 7.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 31m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qu

 8.4. Size:669K  diodes
 dmn3024lk3.pdf

A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 24m @ VGS= 10V 14.4A Green component and RoHS compliant (Note 1) 30

 8.5. Size:195K  diodes
 dmn3029lfg.pdf

DMN3029LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) Small form factor thermally efficient package enables higher TA = 25 C density end products 18.6m @ VGS = 10V 8.0A Occupies just 33% of the board area occupied by SO-8 enabling 30V smaller end pr

 8.6. Size:687K  diodes
 dmn3024lsd.pdf

A Product Line of Diodes Incorporated DMN3024LSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 7.2A 30V 36m @ VGS= 4.5V 5.8A M

 8.7. Size:275K  diodes
 dmn3020lk3.pdf

A Product Line of Diodes Incorporated DMN3020LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green Component and RoHS compliant 20m @ VGS= 10V 16.7A 30V 34m @ VGS= 4.5V 12.6A Mechanical Da

 8.8. Size:284K  diodes
 dmn3025lfg.pdf

DMN3025LFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID Max V(BR)DSS RDS(ON) Max Small form factor thermally efficient package enables higher TA = +25 C density end products Occupies just 33% of the board area occupied by SO-8 enabling 18m @ VGS = 10V 7.5A smaller end prod

 8.9. Size:305K  diodes
 dmn3024lss.pdf

A Product Line of Diodes Incorporated DMN3024LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 8.5A 30V 36m @ VGS= 4.5V 6.9A Mechan

 8.10. Size:265K  inchange semiconductor
 dmn3024lk3.pdf

isc N-Channel MOSFET Transistor DMN3024LK3 FEATURES Drain Current I = 14.4A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu