DMN61D9UW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN61D9UW
Código: 1AC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.44 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.34 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 0.4 nC
Tiempo de subida (tr): 1.8 nS
Conductancia de drenaje-sustrato (Cd): 3.9 pF
Resistencia entre drenaje y fuente RDS(on): 2 Ohm
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de MOSFET DMN61D9UW
DMN61D9UW Datasheet (PDF)
dmn61d9uw.pdf
DMN61D9UW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 2 @ VGS = 5.0V 340mA 60V Fast Switching Speed 300mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 2kV Description Totally Lead-Free & Fully RoHS Compliant (Not
dmn61d8l dmn61d8lvt.pdf
DMN61D8L/LVT Product Summary Features and Benefits ID max Provides a more reliable and robust interface between sensitive V(BR)DSS RDS(ON) max TA = +25C logic and DC relay coils. Replaces 3-4 discrete components enabling PCB footprint to be 1.8 @ VGS = 5V 60V 470mA reduced. 2.4 @ VGS = 3V Internal active clamp removes the need for external zener diode.
dmn61d8lq.pdf
DMN61D8LQ INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER Product Summary Features and Benefits Provides A More Reliable And Robust Interface Between ID Max Sensitive Logic And DC Relay Coils BVDSS RDS(ON) Max TA = +25 Replaces 3 to 4 Discrete Components Enabling PCB Footprint C To Be Reduced 1.8 @ VGS = 5V 60V 470mA Internal Active Clamp Removes The Need For E
dmn6140l.pdf
DMN6140L 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 140m @ VGS = 10V 2.3A 60V Low Input/Output Leakage 170m @ VGS = 4.5V 2.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gr
dmn6140lq.pdf
DMN6140LQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 140m @ VGS = 10V 2.3A 60V Low Input/Output Leakage 170m @ VGS = 4.5V 2.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
