G10N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORDG10N10ADescription The G10N10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON)VDSS @ @ID10V 4.5V (typ) (typ) 100V 16m 18m10AMarking and pin assignment Special process technology for high ESD cap

GOFORDG10N10.Description The G10N10. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON)VDSS @ @ID10V 4.5V (typ) (typ) 100V 14m 15m10AMarking and pin assignment Special process technology for high ESD cap

TK65G10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK65G10N1TK65G10N1TK65G10N1TK65G10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

HGTG10N120BNDData Sheet December 200135A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 35A, 1200V, TC = 25oCThe HGTG10N120BND is a Non-Punch Through (NPT) 1200V Switching SOA CapabilityIGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvoltage switching IGBT famil

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Lo

Isc N-Channel MOSFET Transistor ITK65G10N1FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo