G30N03A Todos los transistores

 

G30N03A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: G30N03A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 25 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 30 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 8 nS
   Conductancia de drenaje-sustrato (Cd): 220 pF
   Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
   Paquete / Cubierta: DFN3X3-8L

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G30N03A Datasheet (PDF)

 ..1. Size:988K  goford
g30n03a.pdf

G30N03A
G30N03A

GOFORDG30N03AN-Channel Enhancement Mode Power MOSFET Description The G30N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

 0.1. Size:1587K  mcc
mcg30n03a.pdf

G30N03A
G30N03A

MCG30N03AFeatures High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ord

 8.1. Size:586K  1
mcg30n03-tp.pdf

G30N03A
G30N03A

MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings

 8.2. Size:709K  1
g30n03d3.pdf

G30N03A
G30N03A

GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)

 8.3. Size:586K  mcc
mcg30n03.pdf

G30N03A
G30N03A

MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings

 8.4. Size:709K  goford
g30n03d3.pdf

G30N03A
G30N03A

GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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