G4N60K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: G4N60K
   Código: 4N60A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 15.3 nC
   trⓘ - Tiempo de subida: 14.7 nS
   Cossⓘ - Capacitancia de salida: 56.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET G4N60K

G4N60K Datasheet (PDF)

..1. Size:4720K goford
g4n60k.pdf

GOFORDG4N60K5N60Features Application 600V, 4A High frequency switching mode power supply R = 2.0 (Typ.) @ V = 10V Uninterruptible Power Supply (UPS) DS(ON) GS Fast switching Electronic ballast 100% avalanche tested Improved dv/dt capability RoHS CompliantPackage TO-252 Ordering Information Part Number Marking Case Packaging

9.1. Size:1358K 1
dg4n60.pdf

DG4N60V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N60N

9.2. Size:396K diodes
dmg4n60sj3.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SJ3 DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS (@ TJ Max) RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 650V 3.0A Low Input Capacitance 2.5 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

9.3. Size:388K diodes
dmg4n60sct.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SCT DMG4N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application TC = +25C Low Input/Output Leakage 650V 2.5@VGS = 10V 4.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

9.4. Size:375K diodes
dmg4n60sk3.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMN60H3D5SK3 / DMN60H4D5SK3 DMG4N60SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS (@ TJ Max) RDS(ON) Max TC = +25C Low Gate Input Resistance 650V 3.7A Low Input Capacitance 2.3 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Note

9.5. Size:2043K anbon
au4n60s ad4n60s at4n60s af4n60s ak4n60s ag4n60s.pdf

9.6. Size:1293K lonten
lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

9.7. Size:1028K lonten
lnc4n60 lnd4n60 lng4n60 lnh4n60.pdf

LNC4N60\LND4N60\LNG4N60\LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge

9.8. Size:273K inchange semiconductor
dmg4n60sj3.pdf

isc N-Channel MOSFET Transistor DMG4N60SJ3FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.9. Size:260K inchange semiconductor
dmg4n60sct.pdf

isc N-Channel MOSFET Transistor DMG4N60SCTFEATURESDrain Current I = 4.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

9.10. Size:266K inchange semiconductor
dmg4n60sk3.pdf

isc N-Channel MOSFET Transistor DMG4N60SK3FEATURESDrain Current I = 3.7A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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