G4N60K Todos los transistores

 ..1. Size:4720K  goford
 g4n60k.pdf

GOFORD G4N60K 5N60 Features Application 600V, 4A High frequency switching mode power supply R = 2.0 (Typ.) @ V = 10V Uninterruptible Power Supply (UPS) DS(ON) GS Fast switching Electronic ballast 100% avalanche tested Improved dv/dt capability RoHS Compliant Package TO-252 Ordering Information Part Number Marking Case Packaging

 9.1. Size:1358K  1
 dg4n60.pdf

 9.2. Size:396K  diodes
 dmg4n60sj3.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SJ3 DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS (@ TJ Max) RDS(ON) Max TC = +25 C High BVDSS Rating for Power Application 650V 3.0A Low Input Capacitance 2.5 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

 9.3. Size:388K  diodes
 dmg4n60sct.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SCT DMG4N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application TC = +25 C Low Input/Output Leakage 650V 2.5 @VGS = 10V 4.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 9.4. Size:375K  diodes
 dmg4n60sk3.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMN60H3D5SK3 / DMN60H4D5SK3 DMG4N60SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS (@ TJ Max) RDS(ON) Max TC = +25 C Low Gate Input Resistance 650V 3.7A Low Input Capacitance 2.3 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Note

 9.5. Size:2043K  anbon
 au4n60s ad4n60s at4n60s af4n60s ak4n60s ag4n60s.pdf

 9.6. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf

LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS(on),max superior switching performance and high avalance Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate

 9.7. Size:1028K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60.pdf

LNC4N60 LND4N60 LNG4N60 LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge

 9.8. Size:273K  inchange semiconductor
 dmg4n60sj3.pdf

isc N-Channel MOSFET Transistor DMG4N60SJ3 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.9. Size:260K  inchange semiconductor
 dmg4n60sct.pdf

isc N-Channel MOSFET Transistor DMG4N60SCT FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.10. Size:266K  inchange semiconductor
 dmg4n60sk3.pdf

isc N-Channel MOSFET Transistor DMG4N60SK3 FEATURES Drain Current I = 3.7A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu