SSP3N80A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSP3N80A Datasheet (PDF)

..1. Size:937K samsung
ssp3n80a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.1. Size:305K 1
ssh3n70 ssp3n70.pdf pdf_icon

9.2. Size:260K fairchild semi
ssp3n90.pdf pdf_icon

SSP3N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

9.3. Size:936K samsung
ssp3n90a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Otros transistores... SSP10N60A , SSP1N50A , SSP1N60A , SSP2N60A , SSP2N80A , SSP2N90A , SSP3N70 , SSP3N70A , IRF9640 , SSP3N90A , SSP45N20A , SSP4N55 , SSP4N60 , SSP4N60AS , SSP4N70 , SSP4N70A , SSP4N80A .