DMP3013SFV Todos los transistores

 ..1. Size:363K  diodes
 dmp3013sfv.pdf

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25 C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

 0.1. Size:363K  1
 dmp3013sfv-13.pdf

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25 C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

 0.2. Size:458K  1
 dmp3013sfv-7.pdf

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) max TC = +25 C Small form factor thermally efficient package enables higher density end products 9.5m @ VGS = -10V -35A -30V Occupies just 33% of the board area occupied b

 8.1. Size:270K  1
 dmp3010lpsq-13.pdf

DMP3010LPSQ Green P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications V(BR)DSS RDS(ON) TA = +25 C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On-State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

 8.2. Size:515K  1
 dmp3017sfv-7.pdf

 8.3. Size:240K  diodes
 dmp3015lss.pdf

DMP3015LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 11m @ VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 17m @ VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D

 8.4. Size:442K  diodes
 dmp3017sfgq.pdf

DMP3017SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TA = +25 C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enab

 8.5. Size:355K  diodes
 dmp3012lps.pdf

DMP3012LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI 5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency Low Minimizes On State Losses 9m @ VGS = -10V -45A RDS(ON) -30V Low Input Capacitance 12m @ VGS = -4.5V -35A Fast Switching Speed

 8.6. Size:148K  diodes
 dmp3010lps.pdf

DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID High Conversion Efficiency V(BR)DSS RDS(ON) TA = 25 C (Note 5) Low Minimizes On State Losses RDS(on) Low Input Capacitance 7.5m @ VGS = -10V -36A Fast Switching Speed -30V

 8.7. Size:396K  diodes
 dmp3010lpsq.pdf

DMP3010LPSQ Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TA = +25 C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

 8.8. Size:232K  diodes
 dmp3010lk3.pdf

DMP3010LK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed "Green" Device (Note 1) 8m @ VGS = -10V -17A -30V Qualified to AEC-Q101 Standards for High Reliability 10.2m @ VGS = -4.5V -14.5A Mechanical Data Description and Appl

 8.9. Size:584K  diodes
 dmp3017sfk.pdf

DMP3017SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25 C 14m @ VGS = -10V -10.4A Low Input/Output Leakage -30V 25m @ VGS = -4.5V -7.8A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 8.10. Size:335K  diodes
 dmp3018sfk.pdf

 8.11. Size:243K  diodes
 dmp3017sfg.pdf

DMP3017SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enabli

 8.12. Size:1755K  cn vbsemi
 dmp3010lps.pdf

DMP3010LPS www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.004 at VGS = - 10 V - 120 COMPLIANT - 30 130 nC 100 % Rg Tested 0.006 at VGS = - 4.5 V - 100 APPLICATIONS Notebook - Load Switch S DFN5X6 Top View Top View Bottom View 1 8 G 2 7 3 6 4

 8.13. Size:265K  inchange semiconductor
 dmp3010lk3.pdf

isc P-Channel MOSFET Transistor DMP3010LK3 FEATURES Drain Current I = -17A@ T =25 D C Drain Source Voltage- V = -30V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur