DMP3098LQ Todos los transistores

 ..1. Size:277K  diodes
 dmp3098lq.pdf

DMP3098LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Low Gate Threshold Voltage TA = +25 C 70m @ VGS = -10V -3.8A Low Input Capacitance -30V 120m @ VGS = -4.5V -3.0A Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

 6.1. Size:200K  diodes
 dmp3098lss.pdf

DMP3098LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 65m @ VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 115m @ VGS = -4.5V Moisture Sensitivity Leve

 6.2. Size:159K  diodes
 dmp3098lsd.pdf

DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Dual P-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -10V Moisture Sensitivity Level 1 per J-STD-020D

 6.3. Size:229K  diodes
 dmp3098ldm.pdf

DMP3098LDM P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON) Case SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 65m @VGS = -10V Moisture Sensitivity Level 1 per J-STD-020D 115m @VGS = -4.5V Terminals Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead F

 6.4. Size:100K  diodes
 dmp3098l.pdf

DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 70m @ VGS = -10V, ID = -3.8A Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120m @ VGS = -4.5V, ID = -3.0A Moisture Sensitivity Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals Fi

 6.5. Size:83K  tysemi
 dmp3098l.pdf

Product specification DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Gate Threshold Voltage V(BR)DSS RDS(on) max TA = 25 C Low Input Capacitance Fast Switching Speed 70m @ VGS = -10V -3.8A Low Input/Output Leakage -30V 120m @ VGS =-4.5V -3.0A Lead Free By Design/RoHS Compliant (Note 1)

 6.6. Size:280K  cn shikues
 dmp3098l.pdf

P-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature -30V/-3.8A, RDS(ON) =55m (MAX) @VGS = -10V. 10V. RDS(ON) = 70m (MAX) @VGS = -4.5V. 4.5V. RDS(ON) =120m (MAX) @VGS = -2.5V. 2.5V. Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package