DMP32D5SFB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMP32D5SFB
   Código: XH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 1.25 nC
   trⓘ - Tiempo de subida: 7.7 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: X1-DFN1006-3

Búsqueda de reemplazo de MOSFET DMP32D5SFB

DMP32D5SFB Datasheet (PDF)

..1. Size:524K diodes
dmp32d5sfb.pdf

DMP32D5SFB 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance V(BR)DSS RDS(ON) Max @ TA = +25C Ultra-Small Surfaced Mount Package 2.4 @ VGS = -10V -400mA -30V ESD Protected Gate -300mA 4 @ VGS = -4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (No

7.1. Size:328K diodes
dmp32d5lfa.pdf

DMP32D5LFA 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(on) 0.48mm2 Package Footprint, 16 Times Smaller Than SOT23 TA = +25C 1.5 @ VGS = -4.5V -0.3 A Low VGS(th), can be Driven Directly from a Battery -30V -0.2 A 2.5 @ VGS = -2.5V Low RDS(ON) ESD Protect

8.1. Size:244K diodes
dmp32d4sw.pdf

DMP32D4SW30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceV(BR)DSS RDS(on) Max @ TA = 25C ESD Protected Gate 2.4 @ VGS = -10V -250mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 4 @ VGS = -4.5V -200mA Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards fo

8.2. Size:232K diodes
dmp32d4sfb.pdf

DMP32D4SFB 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceV(BR)DSS RDS(on) Max @ TA = +25C Ultra-Small Surfaced Mount Package 2.4 @ VGS = -10V -400mA ESD Protected Gate -30V 4 @ VGS = -4.5V -300mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 16 @ VGS = -2.5V -50mA Halogen and Antimony Free

8.3. Size:339K diodes
dmp32d9ufz.pdf

DMP32D9UFZP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package height ID max V(BR)DSS RDS(ON) max 0.62mm x 0.62mm Package Footprint TA = +25C 5 @ VGS = -4.5V Low On-Resistance6 @ VGS = -2.5V Very low Gate Threshold Voltage, 1.0V max -30V -0.2A 7 @ VGS = -1.8V ESD Protected Gat

8.4. Size:329K diodes
dmp32d4s.pdf

DMP32D4S30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceV(BR)DSS RDS(on) Max @TA = +25C ESD Protected Gate to 2kV 2.4 @ VGS = -10V -300mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 4 @ VGS = -4.5V -250mA Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standa

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