DMP6110SVT Todos los transistores

 

DMP6110SVT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMP6110SVT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 57 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TSOT26

 Búsqueda de reemplazo de MOSFET DMP6110SVT

 

DMP6110SVT Datasheet (PDF)

 ..1. Size:327K  diodes
dmp6110svt.pdf

DMP6110SVT
DMP6110SVT

DMP6110SVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TC = +25C Fast Switching Speed 105m @ VGS = -10V -7.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) -60V 130m @ VGS = -4.5V -6.

 6.1. Size:276K  diodes
dmp6110sss.pdf

DMP6110SVT
DMP6110SVT

DMP6110SSS60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 110m @ VGS = -10V -4.5A -60V Fast Switching Speed 130m @ VGS = -4.5V -4.2A Low Input/ Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes

 6.2. Size:377K  diodes
dmp6110ssd.pdf

DMP6110SVT
DMP6110SVT

DMP6110SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 105m @ VGS = -10V -3.3 A Fast Switching Speed -60V 130m @ VGS = -4.5V -3.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

 9.1. Size:288K  diodes
dmp6185se.pdf

DMP6110SVT
DMP6110SVT

DMP6185SE60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) TA = +25C Low on-resistance Fast switching speed 150m @ VGS= -10V -3A -60V Lead-Free Finish; RoHS compliant (Notes 1 & 2) 185m @ VGS= -4.5V -2.7A Halogen and Antimony Free. Green

 9.2. Size:308K  diodes
dmp6185sk3.pdf

DMP6110SVT
DMP6110SVT

DMP6185SK360V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TC = +25C Fast switching speed 150m @ VGS = -10V -9.4A -60V Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 185m @ VGS = -4.5V -8.5A Halogen and Antimony Free. Green

 9.3. Size:527K  diodes
dmp6185seq.pdf

DMP6110SVT
DMP6110SVT

DMP6185SEQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) test in production BVDSS RDS(on) TA = +25C Low on-resistance Fast switching speed 150m @ VGS= -10V -3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 185m @ VGS= -4.5V -2.7A Halogen and Antimony Free. Green D

 9.4. Size:188K  diodes
dmp6180sk3.pdf

DMP6110SVT
DMP6110SVT

DMP6180SK360V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

 9.5. Size:430K  diodes
dmp610dl.pdf

DMP6110SVT
DMP6110SVT

DMP610DL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I DBV R Max DSS DS(ON) Low Gate Threshold Voltage T = +25C A-60V 10 @ V = -5V -180mA Low Input Capacitance GS Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

 9.6. Size:435K  diodes
dmp6180sk3q.pdf

DMP6110SVT
DMP6110SVT

DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

 9.7. Size:254K  inchange semiconductor
dmp6180sk3-13.pdf

DMP6110SVT
DMP6110SVT

isc P-Channel MOSFET Transistor DMP6180SK3-13FEATURESStatic drain-source on-resistance:RDS(on)110m(@V = -10V; I = -12A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Management FunctionsDC / DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)

 9.8. Size:266K  inchange semiconductor
dmp6180sk3.pdf

DMP6110SVT
DMP6110SVT

isc P-Channel MOSFET Transistor DMP6180SK3FEATURESDrain Current I = -14A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R =110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE60NF200I | STF24N60M2 | AONS34304C

 

 
Back to Top

 


History: NCE60NF200I | STF24N60M2 | AONS34304C

DMP6110SVT
  DMP6110SVT
  DMP6110SVT
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top