DMT3006LFV Todos los transistores

 

DMT3006LFV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMT3006LFV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 456 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: POWERDI3333-8
 

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DMT3006LFV Datasheet (PDF)

 ..1. Size:410K  diodes
 dmt3006lfv.pdf pdf_icon

DMT3006LFV

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling

 0.1. Size:410K  1
 dmt3006lfv-7.pdf pdf_icon

DMT3006LFV

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling

 6.1. Size:337K  1
 dmt3006lps-13.pdf pdf_icon

DMT3006LFV

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

 6.2. Size:337K  diodes
 dmt3006lps.pdf pdf_icon

DMT3006LFV

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

MOSTRAR MÁS

Otros transistores... DMPH6050SK3 , DMPH6050SK3Q , DMT10H009LCG , DMT10H010LK3 , DMT10H010LSS , DMT10H015LPS , DMT10H015LSS , DMT3002LPS , SPP20N60C3 , DMT3006LPS , DMT3009LDT , DMT3009LFVW , DMT3020LFDB , DMT3020LFDF , DMT3020LSD , DMT31M6LPS , DMT32M5LFG .

History: AM1440N | MTP2311N3 | QM3001D | HM8N20I

 

 
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