DMT3020LFDF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMT3020LFDF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.9 nS
   Cossⓘ - Capacitancia de salida: 173 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: U-DFN2020-6

Búsqueda de reemplazo de MOSFET DMT3020LFDF

DMT3020LFDF Datasheet (PDF)

..1. Size:407K diodes
dmt3020lfdf.pdf

DMT3020LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 17m @ VGS = 10V 8.4A Low On-Resistance 30V 28m @ VGS = 4.5V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

4.1. Size:582K diodes
dmt3020lfdb.pdf

DMT3020LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID Max V(BR)DSS RDS(ON) Max TA = +25C Low Gate Threshold Voltage Low On-Resistance 7.7A 20m @ VGS = 10V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 32m @ VGS = 4.5V 6.1A Halogen and An

6.1. Size:471K diodes
dmt3020lsd.pdf

DMT3020LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET BVDSS RDS(ON) Max TA = +25C Low On-Resistance Low Gate Threshold Voltage 20m @ VGS = 10V 16A 30V Low Input Capacitance 32m @ VGS = 4.5V 13A Fast Switching Speed Low Input/Output Leakage Description Totally Lead-Free & Fully RoHS Comp

9.1. Size:520K 1
dmt3009lfvw-7.pdf

DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 11m @ VGS = 10V 50A Occupies Just 33% of The Board Area Occupied by

9.2. Size:337K 1
dmt3006lps-13.pdf

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

9.3. Size:410K 1
dmt3006lfv-7.pdf

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling

9.4. Size:461K diodes
dmt3002lps.pdf

DMT3002LPS Green30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features Thermally Efficient Package Cooler Running Applications ID BVDSS RDS(ON) TC = +25C

9.5. Size:520K diodes
dmt3009lfvw.pdf

9.6. Size:449K diodes
dmt3009ldt.pdf

DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low Gate Threshold Voltage Device BVDSS RDS(ON) Max TC = +25 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C (Note 10) Halogen and Antimony Free. Green Device (Note 3) 11.1m @ VGS = 10V 30A Q1 & Q2 30V 13.8m @ VGS = 4.5V 28A 22.0m @ VGS = 3.8V 22A

9.7. Size:421K diodes
dmt3008lfdf.pdf

DMT3008LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 10m @ VGS = 10V 12.0A 30V Low On-Resistance 16m @ VGS = 4.5V 10.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

9.8. Size:337K diodes
dmt3006lps.pdf