DMT6009LSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMT6009LSS
Código: T6009LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.6 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 10.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 33.5 nC
Tiempo de subida (tr): 8.6 nS
Conductancia de drenaje-sustrato (Cd): 438 pF
Resistencia entre drenaje y fuente RDS(on): 0.0095 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET DMT6009LSS
DMT6009LSS Datasheet (PDF)
dmt6009lss.pdf
DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID max BVDSS RDS(ON) max TA = +25C High Conversion Efficiency Low RDS(ON) Ensures On State Losses Are Minimized 9.5m @ VGS = 10V 10.8A 60V Excellent Qgd x RDS(ON) Product (FOM) 12m @ VGS = 4.5V 9.6
dmt6009lps-13.pdf
GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin
dmt6009lfg.pdf
DMT6009LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TC = +25C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 10m @ VGS = 10V 34A 60V Small Form Factor Thermally Efficient Package Enables Higher 1
dmt6009lct.pdf
DMT6009LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Excellent QGD X RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC-DC Converts 12m @VGS = 10V 37.2A Low Input/Output Leakage 60V 14.5m @VGS = 4.5V 33.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gree
dmt6009lps.pdf
GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin
dmt6009lct.pdf
isc N-Channel MOSFET Transistor DMT6009LCTFEATURESDrain Current I = 37.2A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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