DMTH4007LK3 Todos los transistores

 ..1. Size:562K  diodes
 dmth4007lk3.pdf

Green DMTH4007LK3 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) Ensures On State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 7.3m @ VGS = 10V 70A 40V Small Form Factor Thermally Efficient Package Enables Higher 9.8m @

 5.1. Size:479K  1
 dmth4007lps-13.pdf

DMTH4007LPS Green 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25 C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi

 5.2. Size:479K  diodes
 dmth4007lps.pdf

DMTH4007LPS Green 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25 C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi

 7.1. Size:392K  diodes
 dmth4005sk3.pdf

Green DMTH4005SK3 40V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) max TC = +25 C Environments 100% Unclamped Inductive Switching ensures more reliable 40V 95A 4.5m @ VGS = 10V and robust end application Low RDS(ON) minimizes power losses Low

 7.2. Size:450K  diodes
 dmth4004lk3.pdf

DMTH4004LK3 Green 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to 175 C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and 3m @ VGS = 10V 100A Robust End Application 40V 5m @ VGS = 4.5V 100A Low Rdson

 7.3. Size:416K  diodes
 dmth4005sct.pdf

DMTH4005SCT 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25 C 100% Unclamped Inductive Switching Ensures More Reliable 40V 4.7m @ VGS = 10V 100A and Robust End Application Low Input Capacitance Low Input/Output Leakage

 7.4. Size:695K  diodes
 dmth4004sctb.pdf

Green DMTH4004SCTB 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) max TC = +25 C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 40V 3m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

 7.5. Size:260K  inchange semiconductor
 dmth4005sct.pdf

isc N-Channel MOSFET Transistor DMTH4005SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 4.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 7.6. Size:254K  inchange semiconductor
 dmth4004sctb.pdf

isc N-Channel MOSFET Transistor DMTH4004SCTB FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general