DMTH6009LK3Q Todos los transistores

 ..1. Size:555K  diodes
 dmth6009lk3q.pdf

DMTH6009LK3Q Green 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C ideal for high ambient temperature ID Max BVDSS RDS(ON) Max TC = +25 C environments Low RDS(ON) Ensures On State Losses Are Minimized 10m @ VGS = 10V 59A Excellent Qgd x RDS(ON) Product (FOM) 60V Advanced Technology for DC/DC Converters 1

 3.1. Size:499K  diodes
 dmth6009lk3.pdf

DMTH6009LK3 Green 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID Max BVDSS RDS(ON) Max TC = +25 Environments C Low RDS(ON) Ensures on State Losses are Minimized 10m @ VGS = 10V 59A Excellent Qgd x RDS(ON) Product (FOM) 60V Advanced Technology for DC/DC Converter

 7.1. Size:481K  1
 dmth6002lps-13.pdf

DMTH6002LPS Green 60V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 2m @ VGS = 10V 100A and Robust End Application 60V 3m @ VGS = 6V

 7.2. Size:481K  diodes
 dmth6002lps.pdf

DMTH6002LPS Green 60V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 2m @ VGS = 10V 100A and Robust End Application 60V 3m @ VGS = 6V

 7.3. Size:314K  diodes
 dmth6005lct.pdf

DMTH6005LCT 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25 C 100% Unclamped Inductive Switching Ensures more Reliable 6m @ VGS = 10V 100A 60V and Robust End Application 85A 10m @ VGS = 4.5V Low Input Capacitance Low

 7.4. Size:601K  diodes
 dmth6004sk3q.pdf

Green DMTH6004SK3Q 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature Environments BVDSS RDS(ON) Max QG Typ TC = +25 C 100% Unclamped Inductive Switching Ensures More Reliable (Note 10) and Robust End Application 95.4nC 60V 3.8m @ VGS = 10V 100A Low RDS(ON) M

 7.5. Size:339K  diodes
 dmth6004sct.pdf

DMTH6004SCT 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Max TC = +25 C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

 7.6. Size:395K  diodes
 dmth6005lk3q.pdf

Green DMTH6005LK3Q 60V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) max Environments TC = +25 C 100% Unclamped Inductive Switching ensures more reliable 60V 5.6m @ VGS = 10V 90A and robust end application Low RDS(ON) minimizes power losses Lo

 7.7. Size:632K  diodes
 dmth6004sk3.pdf

Green DMTH6004SK3 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal For High Ambient Temperature ID Max Environments BVDSS RDS(ON) Max TC = +25 C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 60V 3.8m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

 7.8. Size:541K  diodes
 dmth6004sctb.pdf

DMTH6004SCTB Green 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25 C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 3.4m @ VGS = 10V 100A and Robust End Application Low RDS(ON) Minimizes Power Losses

 7.9. Size:261K  inchange semiconductor
 dmth6005lct.pdf

isc N-Channel MOSFET Transistor DMTH6005LCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 7.10. Size:261K  inchange semiconductor
 dmth6004sct.pdf

isc N-Channel MOSFET Transistor DMTH6004SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 7.11. Size:254K  inchange semiconductor
 dmth6004sctb.pdf

isc N-Channel MOSFET Transistor DMTH6004SCTB FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general