DMN90H2D2HCTI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN90H2D2HCTI
Código: 90H2D2H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 900 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 20.3 nC
Tiempo de subida (tr): 49 nS
Conductancia de drenaje-sustrato (Cd): 113 pF
Resistencia entre drenaje y fuente RDS(on): 2.2 Ohm
Paquete / Cubierta: TO220F
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DMN90H2D2HCTI Datasheet (PDF)
dmn90h2d2hcti.pdf
DMN90H2D2HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application (Note 7) TC = +25C Low Input/Output Leakage 1000V 2.2@VGS = 10V 6A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description
dmn90h2d2hcti.pdf
isc N-Channel MOSFET Transistor DMN90H2D2HCTIFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmn90h8d5hct.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BV R Package DSS DS(ON)T = +25C C High BV Rating for Power Application DSSTO220AB Low Input/Output Leakage 900V 7@V = 10V 2.5A GS(Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H
dmn90h8d5hcti.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance IDBV R DSS DS(ON) High BVDSS Rating for Power Application T = +25C C Low Input/Output Leakage 900V 7@VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green
dmn90h8d5hct.pdf
isc N-Channel MOSFET Transistor DMN90H8D5HCTFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmn90h8d5hcti.pdf
isc N-Channel MOSFET Transistor DMN90H8D5HCTIFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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