DMN90H2D2HCTI Todos los transistores

 ..1. Size:369K  diodes
 dmn90h2d2hcti.pdf

DMN90H2D2HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application (Note 7) TC = +25 C Low Input/Output Leakage 1000V 2.2 @VGS = 10V 6A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 ..2. Size:251K  inchange semiconductor
 dmn90h2d2hcti.pdf

isc N-Channel MOSFET Transistor DMN90H2D2HCTI FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 8.1. Size:602K  diodes
 dmn90h8d5hct.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low Input Capacitance BV R Package DSS DS(ON) T = +25 C C High BV Rating for Power Application DSS TO220AB Low Input/Output Leakage 900V 7 @V = 10V 2.5A GS (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H

 8.2. Size:545K  diodes
 dmn90h8d5hcti.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BVDSS Rating for Power Application T = +25 C C Low Input/Output Leakage 900V 7 @VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green

 8.3. Size:261K  inchange semiconductor
 dmn90h8d5hct.pdf

isc N-Channel MOSFET Transistor DMN90H8D5HCT FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.4. Size:252K  inchange semiconductor
 dmn90h8d5hcti.pdf

isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general