DMNH4005SCT Todos los transistores

 ..1. Size:572K  diodes
 dmnh4005sct.pdf

Green DMNH4005SCT 40V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Low Input/Output Leakage TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 40V 4.0m @ VGS = 10V 150A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

 ..2. Size:261K  inchange semiconductor
 dmnh4005sct.pdf

isc N-Channel MOSFET Transistor DMNH4005SCT FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 7.1. Size:527K  1
 dmnh4006spsq-13.pdf

DMNH4006SPSQ Green 40V N-CHANNEL 175 C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175 C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low

 7.2. Size:471K  diodes
 dmnh4006sk3.pdf

DMNH4006SK3 Green 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TC = +25 C Low Input Capacitance 40V 6m @ VGS = 10V 140A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability De

 7.3. Size:527K  diodes
 dmnh4006spsq.pdf

DMNH4006SPSQ Green 40V N-CHANNEL 175 C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175 C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low

 7.4. Size:266K  inchange semiconductor
 dmnh4006sk3.pdf

isc N-Channel MOSFET Transistor DMNH4006SK3 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p