DMT6005LCT Todos los transistores

 ..1. Size:412K  diodes
 dmt6005lct.pdf

Green DMT6005LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application 6m @ VGS = 10V 100A Low Input Capacitance 60V 10m @ VGS = 4.5V 85A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halo

 ..2. Size:261K  inchange semiconductor
 dmt6005lct.pdf

isc N-Channel MOSFET Transistor DMT6005LCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 6.1. Size:487K  1
 dmt6005lps-13.pdf

DMT6005LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID 100% Unclamped Inductive Switching ensures more reliable and BVDSS RDS(ON) Max TC = +25 C robust end application (Note 9) Low RDS(ON) Minimizes Power Losses 4.5m @ VGS = 10V 100A 60V Low QG Minimizes Switching Losses 6.5m @ VGS = 4.5V 100A Lead

 6.2. Size:487K  diodes
 dmt6005lps.pdf

DMT6005LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID 100% Unclamped Inductive Switching ensures more reliable and BVDSS RDS(ON) Max TC = +25 C robust end application (Note 9) Low RDS(ON) Minimizes Power Losses 4.5m @ VGS = 10V 100A 60V Low QG Minimizes Switching Losses 6.5m @ VGS = 4.5V 100A Lead

 8.1. Size:638K  1
 dmt6009lps-13.pdf

Green DMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

 8.2. Size:378K  1
 dmt6004lps-13.pdf

DMT6004LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

 8.3. Size:432K  diodes
 dmt6009lfg.pdf

DMT6009LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TC = +25 C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 10m @ VGS = 10V 34A 60V Small Form Factor Thermally Efficient Package Enables Higher 1

 8.4. Size:585K  diodes
 dmt6009lct.pdf

DMT6009LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Excellent QGD X RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25 C Advanced Technology for DC-DC Converts 12m @VGS = 10V 37.2A Low Input/Output Leakage 60V 14.5m @VGS = 4.5V 33.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gree

 8.5. Size:638K  diodes
 dmt6009lps.pdf

Green DMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

 8.6. Size:287K  diodes
 dmt6004sct.pdf

DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application ID Low Input Capacitance BVDSS RDS(ON) max TC = +25 C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Fre

 8.7. Size:265K  diodes
 dmt6008lfg.pdf

DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) Ensures on State Losses Are Minimized ID max V(BR)DSS RDS(ON) max Excellent Qgd x RDS (ON) Product (FOM) TC = +25 C Advanced Technology for DC/DC Converts 7.5m @ VGS = 10V 60A 60V Small Form Factor Thermally Efficient Package Enables Higher 11.5m @ VGS

 8.8. Size:378K  diodes
 dmt6004lps.pdf

DMT6004LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

 8.9. Size:474K  diodes
 dmt6009lss.pdf

DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID max BVDSS RDS(ON) max TA = +25 C High Conversion Efficiency Low RDS(ON) Ensures On State Losses Are Minimized 9.5m @ VGS = 10V 10.8A 60V Excellent Qgd x RDS(ON) Product (FOM) 12m @ VGS = 4.5V 9.6

 8.10. Size:261K  inchange semiconductor
 dmt6009lct.pdf

isc N-Channel MOSFET Transistor DMT6009LCT FEATURES Drain Current I = 37.2A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 8.11. Size:261K  inchange semiconductor
 dmt6004sct.pdf

isc N-Channel MOSFET Transistor DMT6004SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p