EN2301 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EN2301
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 146 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.097 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de EN2301 MOSFET
- Selecciónⓘ de transistores por parámetros
EN2301 datasheet
en2301.pdf
Eternal Semiconductor Inc. EN2301 P-Channel Enhancement-Mode MOSFET (-20V, -2.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Typ. 85 @ VGS = -4.5V,ID=-2.8A -20V -2.8A 105 @ VGS = -2.5V,ID=-2.0A Features Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package Lead Pb -free and halogen-free EN2301 Pin Assignment & Symbol
cen2301.pdf
CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23-T package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units
cen2307a.pdf
CEN2307A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Lim
en2305.pdf
Eternal Semiconductor Inc. EN2305 P-Channel Enhancement-Mode MOSFET (-20V, -4.9A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 34 @ VGS = -4.5 V,ID=-4.5A -20V -4.9A 44 @ VGS = -2.5V,ID=-2.5A Features Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23 package Lead Pb -free and halogen-free EN2305 Pin Assignment & Symbol 3-Lead Plastic S
Otros transistores... ISCNL256N , ISP80N08S2L , NVD5C648NL , SUK3015 , EC4953 , EC8812 , EM8810 , EN2300 , SKD502T , EN2305 , ES4812 , ES4953 , ES9435 , ES9926 , ET2316 , ET2N7002K , ET4410 .
History: 2N3382 | FDN335N-NL
History: 2N3382 | FDN335N-NL
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
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