ET6300 Todos los transistores

 

ET6300 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ET6300
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PDFN3333
     - Selección de transistores por parámetros

 

ET6300 Datasheet (PDF)

 ..1. Size:688K  eternal
et6300.pdf pdf_icon

ET6300

Eternal Semiconductor Inc.ET6300N-Channel Enhancement-Mode MOSFET (30V,45A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max7.9 @ VGS = 10V, ID=20A30V 45A 12 @ VGS = 4.5V, ID=10AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching LeadPb-free and halogen-freePin 1 / 2 / 3:

 9.1. Size:457K  eternal
et6309.pdf pdf_icon

ET6300

Eternal Semiconductor Inc.ET6309N-Channel Fast Switching MOSFET (30V, 100A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Max4 @ VGS = 10V, ID=30A 30V 100A6 @ VGS = 4.5V, ID=15AFeatures Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trenchtechnology 100% EAS Guaranteedtechnology LeadPb-free and halogen-freeTOP Marking E

 9.2. Size:758K  eternal
et6303.pdf pdf_icon

ET6300

Eternal Semiconductor Inc.ET6303P-Channel Enhancement-Mode MOSFET (-30V, -47A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.8.5 @ VGS = 10V, ID=20A-30V -47A15@ VGS = 4.5V, ID=10AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching LeadPb-free and halogen-freePin 1 / 2

 9.3. Size:960K  eternal
et6304.pdf pdf_icon

ET6300

Eternal Semiconductor Inc.ET6304N-Channel High Density Trench MOSFET (30V, 64A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 4 @ VGS = 10V, ID=20A30V 645.7 @ VGS = 4.5V, ID=16AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeTOP Marking ET6304 XXXXXX

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDP5N50 | HM4612 | OSG80R900FF | IRFSL31N20DP | AP9563GK | P9515BD | AOTF7N70

 

 
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