FIR4N60BPG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR4N60BPG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 77 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 6.5 nC
Tiempo de subida (tr): 3 nS
Conductancia de drenaje-sustrato (Cd): 28 pF
Resistencia entre drenaje y fuente RDS(on): 2.4 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET FIR4N60BPG
FIR4N60BPG Datasheet (PDF)
fir4n60bpg.pdf
FIR4N60BPG N-Channel Super Junction Power MOSFET-YPIN Connection TO-251General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.G D SFeatures New
fir4n60fg.pdf
FIR4N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FGeneral Description FIR4N60FG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
fir4n60lg.pdf
FIR4N60LGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR4N60LG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The1improved planar stripe cell and the improved guard ring 3terminal have been especially tailored to minimize on-state resistance, provi
fir4n65afg.pdf
FIR4N65AFG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=13.7nC (Typ.). BVDSS=650V,ID=4AG D S RDS(on) : 2.6 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assemb
fir4n65lg.pdf
FIR4N65LGAdvanced N-Ch Power MOSFET-HPIN Connection TO-252(D-PAK)General Description FIR4N65LG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology Dwhich reduce the conduction loss, improve switching Gperformance and enhance the avalanche energy. The transistor Scan be used in various power switching circuit for system miniaturiz
fir4n65bpg.pdf
FIR4N65BPGAdvanced N-Ch Power MOSFETPIN Connection TO-251(I-PAK)General DescriptionFIR4N65BPGis an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state 1 2 3resistance, pro
fir4n65fg.pdf
FIR4N65FGAdvanced N-Ch Power MOSFET-HPIN Connection TO-220FGeneral Description FIR4N65FG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching G D S performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system gSchematic di
fir4n65f.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor FIR4N65FFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationD
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AOU4N60
