FIR7N65FG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR7N65FG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 145 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 97.7 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Encapsulados: TO220F
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FIR7N65FG datasheet
fir7n65fg.pdf
FIR7N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F General Description FIR7N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
fir7n60fg.pdf
FIR7N60FG Advanced N-Ch Power MOSFET-I General Description PIN Connection TO-220F FIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit
fir7ns65afg.pdf
FIR7NS65AFG 7A, 650V DP MOS POWER TRANSISTOR-S PIN Connection TO-220F DESCRIPTION FIR7NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using technology. DP MOS It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, G D S high power density,and superior thermal behavi
fir7ns70afg fir7ns70alg.pdf
FIR7NS70AFG/ALG 7A,700V DP MOS Power Transistor-E PIN Connection TO-220F DESCRIPTION FIR7NS70AFG/ALG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavi
Otros transistores... FIR2N65ABPG , FIR4N60BPG , FIR4N60FG , FIR4N60LG , FIR4N65BPG , FIR4N65FG , FIR4N65LG , FIR7N60FG , IRFZ48N , AS3423B , 2N7002HW , 2N7002HT , 2N7002HL , BL2302 , BL2305 , GP2301 , GP2302 .
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