AS3423B Todos los transistores

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P-Channel Enhancement Mode MOSFET Formosa MS AS3423B Product Summary V(BR)DSS RDS(on)MAX ID 90m @-4.5V -20V -3A 110m @-2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23-3L Marking AS23 http //www.formosagr.com Document ID I

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P-Channel MOSFET AS3423 SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.

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AS3422 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING AR Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage BV 55 V DSS -