HY1603U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY1603U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 62 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 702 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO251

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HY1603U datasheet

 ..1. Size:3657K  hymexa
hy1603d hy1603u hy1603s.pdf pdf_icon

HY1603U

HY1603D/U/S N-Channel Enhancement Mode MOSFET Features Pin Description 30V/62A, RDS(ON)= 4.0m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge S S D Excellent CdV/dt effect decline D G G Advanced high cell density Trench technology S D G Halogen - Free Device Available TO-251-3L TO-251-3L TO-252-2L Applications D High Frequency Synchronous Buck

 8.1. Size:4782K  hymexa
hy1603p hy1603b.pdf pdf_icon

HY1603U

HY1603P/B N-Channel Enhancement Mode MOSFET Features Pin Description 30V/62A, RDS(ON)= 4.8m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline S D Advanced high cell density Trench technology G Halogen - Free Device Available S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D High Frequency Synchronous

 9.1. Size:627K  hymexa
hy1606p hy1606b.pdf pdf_icon

HY1603U

HY1606P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A RDS(ON)= 10.4 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and

 9.2. Size:1089K  hymexa
hy1607d hy1607u hy1607v.pdf pdf_icon

HY1603U

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 68V/70A RDS(ON)= 6.8m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S D G Lead Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Cod

Otros transistores... HY1403D, HY1403U, HY1403V, HY1503C1, HY1506C2, HY15P03C2, HY15P03S, HY1603D, IRF1404, HY1603S, HY1603P, HY1603B, HY1606D, HY1606U, HY1606V, HY1607D, HY1607U