HY1606D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY1606D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 64 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 66 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 760 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de HY1606D MOSFET

- Selecciónⓘ de transistores por parámetros

 

HY1606D datasheet

 ..1. Size:957K  hymexa
 hy1606d hy1606u hy1606v.pdf pdf_icon

HY1606D

HY1606D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A, RDS(ON)=10.4 m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged S D S S Lead Free and Green Devices Available G D D G G (RoHS Compliant) S D G TO-251-3L TO-251-3L TO-252-2L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marki

 8.1. Size:627K  hymexa
 hy1606p hy1606b.pdf pdf_icon

HY1606D

HY1606P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A RDS(ON)= 10.4 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and

 8.2. Size:627K  hymexa
 hy1606p-b.pdf pdf_icon

HY1606D

HY1606P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A RDS(ON)= 10.4 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and

 9.1. Size:1089K  hymexa
 hy1607d hy1607u hy1607v.pdf pdf_icon

HY1606D

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 68V/70A RDS(ON)= 6.8m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S D G Lead Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Cod

MOSTRAR MÁS

Otros transistores... HY1506C2, HY15P03C2, HY15P03S, HY1603D, HY1603U, HY1603S, HY1603P, HY1603B, IRFP260N, HY1606U, HY1606V, HY1607D, HY1607U, HY1607V, HY1607M, HY1607B, HY1607MF