HY1606U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY1606U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 64 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 66 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 760 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET HY1606U
HY1606U Datasheet (PDF)
hy1606d hy1606u hy1606v.pdf
HY1606D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66A,RDS(ON)=10.4 m(typ.) @ VGS=10V Avalanche Rated Reliable and RuggedSDSS Lead Free and Green Devices AvailableGDDGG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marki
hy1606p hy1606b.pdf
HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and
hy1606p-b.pdf
HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and
hy1607d hy1607u hy1607v.pdf
HY1607D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 68V/70ARDS(ON)= 6.8m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SDG Lead Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Cod
hy1603d hy1603u hy1603s.pdf
HY1603D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.0m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge SSD Excellent CdV/dt effect decline DGG Advanced high cell density Trench technology SDG Halogen - Free Device Available TO-251-3L TO-251-3LTO-252-2LApplicationsD High Frequency Synchronous Buck
hy1607p hy1607m hy1607b hy1607mf hy1607ps hy1607pm.pdf
SD GSDG SSDDGG TO-220FB-3L TO-220FB-3M TO-263-2L TO-3PM-3L SDG SSD
hy1603p hy1603b.pdf
HY1603P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.8m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline SD Advanced high cell density Trench technology G Halogen - Free Device Available SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD High Frequency Synchronous
hy1607p.pdf
HY1607PN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/70ARDS(ON)= 6.5m (typ.) @ VGS=10V100% avalanche testedGD Reliable and Rugged S Lead Free and Green Devices Available D(RoHS Compliant)ApplicationsGSwitching application Power Management for Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeP : T
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
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