HY1607PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HY1607PS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 68 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 362 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: TO3P

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HY1607PS Datasheet (PDF)

..1. Size:2351K hymexa
hy1607p hy1607m hy1607b hy1607mf hy1607ps hy1607pm.pdf

SD GSDG SSDDGG TO-220FB-3L TO-220FB-3M TO-263-2L TO-3PM-3L SDG SSD

7.1. Size:947K hymexa
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HY1607PN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/70ARDS(ON)= 6.5m (typ.) @ VGS=10V100% avalanche testedGD Reliable and Rugged S Lead Free and Green Devices Available D(RoHS Compliant)ApplicationsGSwitching application Power Management for Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeP : T

8.1. Size:1089K hymexa
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HY1607D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 68V/70ARDS(ON)= 6.8m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SDG Lead Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Cod

9.1. Size:627K hymexa
hy1606p hy1606b.pdf

HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and

9.2. Size:627K hymexa
hy1606p-b.pdf

9.3. Size:3657K hymexa
hy1603d hy1603u hy1603s.pdf

HY1603D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.0m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge SSD Excellent CdV/dt effect decline DGG Advanced high cell density Trench technology SDG Halogen - Free Device Available TO-251-3L TO-251-3LTO-252-2LApplicationsD High Frequency Synchronous Buck

9.4. Size:957K hymexa
hy1606d hy1606u hy1606v.pdf

HY1606D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66A,RDS(ON)=10.4 m(typ.) @ VGS=10V Avalanche Rated Reliable and RuggedSDSS Lead Free and Green Devices AvailableGDDGG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marki

9.5. Size:4782K hymexa
hy1603p hy1603b.pdf

HY1603P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.8m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline SD Advanced high cell density Trench technology G Halogen - Free Device Available SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD High Frequency Synchronous

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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