HY1904D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HY1904D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 72 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 202 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET HY1904D

HY1904D Datasheet (PDF)

..1. Size:1637K hymexa
hy1904d hy1904u hy1904v.pdf

HY1904D/U/V N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/72A RDS(ON)= 4.8m(typ.)@VGS = 10V RDS(ON)= 5.8m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems N-Channel MOSFET

8.1. Size:1085K 1
hy1904c2.pdf

HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe

8.2. Size:1085K hymexa
hy1904c2.pdf

9.1. Size:712K 1
hy1906c2.pdf

HY1906C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/70AD D D D D D D DRDS(ON)= 5.7 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe

9.2. Size:2269K hymexa
hy1906p hy1906b.pdf

HY1906P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description/ , 60V 120 A6.0 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking

9.3. Size:1317K hymexa
hy1908p hy1908m hy1908b hy1908mf hy1908ps hy1908pm.pdf

HY1908P/M/B/ MF /PS/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/90A RDS(ON)= 7m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) TO-220FB-3L TO-220FB-3S TO-263-2L Applications Switching application Power management for inverter systems TO-220MF-3L TO-3PS-3L TO-3PM-

9.4. Size:4518K hymexa
hy1908d hy1908u hy1908s.pdf

HY1908D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/90A,7.8 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and RuggedSSDDG Lead Free and Green Devices AvailableG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Informatio

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUZ14

Liste

Recientemente añadidas las descripciónes de los transistores: