HY3003D Todos los transistores

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HY3003P/B N-Channel Enhancement Mode MOSFET Features Pin Description 30V/100A RDS(ON)= 3.5m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline S D Advanced high cell density Trench technology G Halogen - Free Device Available S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D High Frequency Synchronous

HY3007P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features / 68V 120 A 5.0 (typ.) @ VGS=10V RDS(ON)= m S D G S D Avalanche Rated G S D Reliable and Rugged G TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G Applications TO-3PS-3L TO-3PM-3S Power Management for Inverter Sy

HY3008P/M/B/ MF /PL/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/100A RDS(ON)= 6.6m (typ.)@VGS = 10V S D G 100% Avalanche Tested S D G Reliable and Rugged S D G Lead- Free Devices Available TO-220FB-3L TO-220FB-3M TO-263-2L (RoHS Compliant) Applications S D Switching application G S S D D Power management for inverter systems