HY3003V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HY3003V Datasheet (PDF)

..1. Size:968K hymexa
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HY3003P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/100ARDS(ON)= 3.5m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline SD Advanced high cell density Trench technology G Halogen - Free Device Available SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD High Frequency Synchronous

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HY3007P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures / 68V 120 A5.0 (typ.) @ VGS=10VRDS(ON)= mSDGSD Avalanche RatedGSD Reliable and RuggedGTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGApplications TO-3PS-3L TO-3PM-3S Power Management for Inverter Sy

9.2. Size:2157K hymexa
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HY3008P/M/B/ MF /PL/PMN-Channel Enhancement Mode MOSFET Feature Pin Description 80V/100ARDS(ON)= 6.6m(typ.)@VGS = 10V SDG 100% Avalanche Tested SDG Reliable and Rugged SDG Lead- Free Devices Available TO-220FB-3LTO-220FB-3M TO-263-2L(RoHS Compliant) Applications SD Switching applicationGSSDD Power management for inverter systems

Otros transistores... HY1920W , HY19P03D , HY19P03U , HY19P03V , HY19P03P , HY19P03B , HY3003D , HY3003U , 13N50 , HY3008P , HY3008M , HY3008B , HY3008MF , HY3008PL , HY3008PM , HY3010P , HY3010B .