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HY3208APM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY3208APM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 539 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO3P
 

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HY3208APM Datasheet (PDF)

 ..1. Size:1032K  hymexa
 hy3208ap hy3208am hy3208ab hy3208aps hy3208apm.pdf pdf_icon

HY3208APM

HY3208AP/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin Descriptioneatures F 80V/120ARDS(ON)= 5.5 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGTO-3PS-3L TO-3PM-3SApplications Power Management for Inverter

 8.1. Size:739K  hymexa
 hy3208.pdf pdf_icon

HY3208APM

HY3208P/M/B/PS/PMAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range 55 to 175 C -IS Diode Continuous Forward Current TC=25C 120 A Mounted on Large Heat Sink IDM Pulsed Drain Current * T

 9.1. Size:1133K  1
 hy3203c2.pdf pdf_icon

HY3208APM

HY3203C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/120AD D D D D D D DRDS(ON)= 1.9m(typ.) @VGS = 10VRDS(ON)= 2.5m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

 9.2. Size:1133K  hymexa
 hy3203c2.pdf pdf_icon

HY3208APM

HY3203C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/120AD D D D D D D DRDS(ON)= 1.9m(typ.) @VGS = 10VRDS(ON)= 2.5m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

MOSTRAR MÁS

Otros transistores... HY3008PM , HY3010P , HY3010B , HY3203C2 , HY3208AP , HY3208AM , HY3208AB , HY3208APS , RU6888R , HY3215P , HY3215M , HY3215B , HY3215PS , HY3215PM , HY3312P , HY3312M , HY3312B .

History: QM0016P | H5N1503P | AFN2308 | NP82N055KHE | CED16N10 | AOI4286 | BUK9E4R4-40B

 

 
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